×

You are using an outdated browser Internet Explorer. It does not support some functions of the site.

Recommend that you install one of the following browsers: Firefox, Opera or Chrome.

Contacts:

+7 961 270-60-01
ivdon3@bk.ru

Investigation of temperature distribution in a TiO2 film under pulsed laser heating

Abstract

Investigation of temperature distribution in a TiO2 film under pulsed laser heating

Sayenko A.V., Malyukov S.P., Paliy A.V., Bondarchuk D.A., Bespoludin V.V.

Incoming article date: 28.07.2017

Theoretical studies of the temperature distribution during laser heating of the TiO2 precursor film on the FTO/glass substrate have been carried out. The simulation was performed on the basis of a numerical solution of the heat equation in the Matlab program to determine the energy density of the laser radiation necessary for crystallization of TiO2. It was shown that on the surface of the TiO2 precursor the temperature reaches a maximum value at a time point of 133 ns with the Gaussian temporal form of the laser pulse. The optimum energy density for crystallization of the TiO2 precursor film with the nanosecond pulse duration is 1.3-1.6 J/cm2, when the film thickness temperature corresponds to 400-500 °C. The obtained results of the simulation are consistent with experimental studies.

Keywords: numerical simulation, laser heating, temperature distribution, TiO2 film, solar cell