Effect of silicon ion implantation on the anodic behavior of aluminum films
Abstract
Effect of silicon ion implantation on the anodic behavior of aluminum films
Incoming article date: 18.11.2020The main results of studies of the anodic behavior and chemical composition of the surface layer of the aluminum film before and after implantation of silicon ions (20 keV), conducted using the method of measuring potentiostatic polarization curves, are presented. The decrease in the anode polarization currents and the expansion of the passivation region depending on the dose of the introduced ions, due to the formation of oxide compounds with the implanted silicon impurity, are shown.
Keywords: ion implantation, films, aluminum, polarization curves, potentiostat, anode behavior, auger electron spectra, electrolyte, silicon ions