Effects of ion-argon bombardment in the photoconductivity spectra of CdS crystals near edge of fundamental absorption
Abstract
Effects of ion-argon bombardment in the photoconductivity spectra of CdS crystals near edge of fundamental absorption
Incoming article date: 17.05.2019The paper presents the results of studies of the effect of ion-argon bombardment in vacuum on the spectral distribution of the photoconductivity of CdS crystals in the region of the fundamental absorption edge and on the current-voltage characteristic of the semiconductor under study. In the course of research, characteristic changes were found in the spectral distribution of the photoconductivity of a CdS crystal in the edge region of the spectrum and in its current-voltage characteristic at room temperature. It was shown that low-dose ion-argon bombardment leads to an increase in photosensitivity, as well as to a change in the spectral distribution of the photocurrent beyond the absorption edge of a semiconductor. It was found that the exposure of the sample, after exposure to it with argon ions, leads to the relaxation of the photoconductivity spectra of CdS crystals in the direction of the initial distribution. The observed spectral changes are associated with a decrease in the surface concentration of the recombina-tion centers, as well as with an increase in the number of near-surface donor self-defective centers, caused by the action of argon ions on the surface of CdS crystals. Exposure of the CdS crystal under investigation in the air, after exposure to it with argon ions, leads to a reverse increase in the number of recombination centers on the sample sur-face due to the interaction of the surface of the semiconductor with oxygen contained in the air.
Keywords: ion-argon bombardment, photoconductivity spectra, CdS crystals, surface recombination, current-voltage characteristic