GaInAsBi epitaxial films based on indium arsenide - a new material for infrared lighting technology
Abstract
GaInAsBi epitaxial films based on indium arsenide - a new material for infrared lighting technology
Incoming article date: 14.07.2021The results of a theoretical and experimental study of the synthesis of GaInAsBi thin-film structures formed on InAs substrates in the field of a temperature gradient are discussed. The features of interfacial interaction in the In-As-Sb system in the presence of isovalent solvents (In, Bi) have been studied. The values of the interaction parameters and the distribution coefficients of the system components are determined. Optimal technological modes for obtaining InAs-based heterostructures are presented. The properties of the surface of epitaxial layers are studied experimentally. It was found that the main control parameters are the temperature of thermomigration and its gradient. It is shown that the synthesized semiconductor materials can be effectively used in electronic devices of a new generation - electro-optical modulators and supersensitive sensor elements.
Keywords: epitaxial structure, crystallization, recrystallization, melt, segregation coefficient, organometallic compound, voltage sensitivity, near infrared range, solid solution, optical characteristic