The article describes the design of the integral micromechanical sensor of linear accelerations of the capacitive type; A construction method is briefly described using the self-assembly operation based on controlled self-organization of mechanically stressed semiconductor GaAs / InAs layers. The design of the capacitive accelerometer was modeled in the CAD system ANSYS, where static and modal analysis were performed. The results of mathematical modeling meet the requirements of modern micromechanical accelerometers, and allow them to be used for the further development of structures of this type. The obtained data can be used in particular for calculating the recommended parameters in the development of methods for designing capacitive sensors of angular velocities and linear accelerations and for developing more accurate models of MEMS structures.
Keywords: MEMS, microelectromechanical system, accelerometer, modeling, design, sensor, sensor, mathematical model
In article the design of an integrated micromechanical accelerometer of capacitive type is considered. The method with use of operation of self-assembly, constructed on the basis of the operated self-organization of mechanically intense semiconductor layers of GaAs/InAs is considered. This design was designed also a promodelirovana in ANSYS CAD. Results of model operation meet requirements, shown to present microaccelerometers, and give the chance to use them for further perfecting of structures of the given type. It is possible to use the obtained data in particular for calculation of the recommended parameters when developing techniques of projection of accelerometers and gyroscopes and also for development of more precise models of microelectromechanical structures.
Keywords: MEMS, capacitive type, micromechanical accelerometer, design, sensor, sensor, mathematical model, GaAs/InAs