The paper considers a model problem of a combined thermal and diffusion process in silicon. The mathematical model of this process is an initial-boundary value problem for a system of linear partial differential equations of parabolic type. In this system, one equation describes the process of heat propagation in silicon, and the other describes the process of impurity diffusion in it. In this case, the equations are not independent in the same way that the diffusion coefficient depends on temperature. For each equation in this system, the corresponding initial-boundary conditions are set. An implicit difference scheme and the classical sweep method are used to find an approximate solution to the problem that has arisen. The paper presents a description of a numerical algorithm and exact calculation formulas for solving a discretized parabolic problem.

Keywords: model of thermal diffusion process, numerical simulation, sweep method, implicit difference scheme

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